The new approach to controlling the magnetic field through a microphone can open doors to memory, computing, and sensing devices, which are much less powerful than the current sentence. This approach is also an approach to physical and physical limitations to minimize progress.
Researchers at MIT and Brookhave National Laboratory have shown that a small voltage can be controlled by a thin-film magnetic properties. Like today's standard memory chips, the new magnetic orientation has changed without the need for current power.
New findings are reported in the newspaper today Natural materialsIn a paper published by Jeffrey Beach, Material Science and Engineering Professor at the MP Material Materials Research Laboratory; Auck, Jun, a graduate student Eight in MIT Brookhawan
Researchers are examining new technologies that are within the limits, because silicon microkeepers draw closer to the original physics that can enhance their physical consumption and increase their capacity. One of the promises is a spontanex called a spontronx. This is the use of electrons, which are called spin instead of their electric charge.
The silicon memory chips need spindronic devices to retain their magnetic properties without the constant power requirement, so they need only a very low power to operate. Another important constraint of today's devices – they create very little heat.
But spitonic technology has its limitations. One of the essentials is one of the easiest ways to control the magnetic properties of electronic material using the voltage. Many of the research groups in the world follow that challenge.
Previous efforts are based on the electronic configuration of the interface between a metallic magnetinator and the insulators using a device structure, such as a capacitor. Electrical charge and material can alter the magnetic properties of the material, but only in very small quantities it can not be used on real devices. There are attempts to use the ions instead of electrons to replace magnetic properties. For example, oxygen ions are used to oxidize a thin layer of magnetic material, which makes great changes in magnetic properties. However, adding oxygen ions and removal of oxygen ions can cause damage to the material, which creates a mechanical damage, which limits the limit for some reparations – it is useless for computational devices.
The new discovery is surrounding it using hydrogen ions instead of large oxygen ions used in previous attempts. Researchers say the new system is much faster and other important advantages, since hydrogen ions can be easily relieved.
Because hydrogen ions are too small, they can get out of the crystalline structure of the spindronic device, changing the magnetic orientation every time, without damaging the material. In fact, the team has now proven that these materials do not degrade more than 2,000 cycles. In addition, unlike oxygen ion, hydrogen can easily pass through the metallic layers, allowing the team to control the character of the capillaries on a device that is not controlled in any other way.
"When you pump hydrogen into the magnetosphere, it's magnetic," says Tan. "By using a voltage you can apply 90 degrees and turn the magnetic direction – it is completely opposite." Using the tool to easily write the "bits" of data on spytronic devices, because it uses the storage of the orientation of the magnetic polarity.
The beach, beach and its lab found that the original process for controlling magnetism through oxygen ions is said to have started research in a new area called "magnetic ionics". This new discovery is now "this entire field has ended."
"This is a considerable improvement," says Chris Lightton, professor of deanstrained McNain University at the University of Minhosa's Chemical Engineering and Materials Sciences. "Magnetar is now a game of applications that use magnetic material to protect and retrieve digital data, to control the magnetic objects and to control magnetic objects.
"Hydrogen in the use of hydrogen in the control of magnetism is not new, but a solid state instrument that makes good influence on magnetic properties – that's so important!" He says. "By the end of the day, by switching a swish, you can control any kind of stuff, faster and faster, through a speedy cycle, in general, for science and engineering."
Basically, the beach explains that he and his team are "trying to make the transistor's magnetic analog," whose physical properties can run continuously without deterioration.
Only add water
This discovery, partially passed through blindness. When experimenting with layered magnetic objects in order to find ways to change the magnetic properties, Tan found out that his experimental results were not quite as different as the reasons for which it was not fully revealed. Over time, after examining different tests, he realized that the tenderness in the air was unchanged. He worked well during humidity compared with dry matter. The atmospheric water molecules are divided into the atmospheric atmosphere of oxygen and hydrogen, while oxygen escapes from the air and hydrogen becomes ionized and penetrating into magnetic devices. – Changing its magnetic field.
The product produced by the group includes the substrate of several thin layers, which include footwork changes in a spatial layer, a layer of metal, such as pallium or platinum, and a gold layer to connect to the driving electronic voltage with a header of gadolinium oxide.
The magnetism is by using a very small voltage and then continues. It does not push backwards, but the electric memory chip keeps the device short, connecting it to the two sides as an electrical power, while a traditional memory chip needs to be maintained steady power. "You can use a pulse to reduce power consumption," says the beach.
The beach says it will be especially useful for new devices, low power consumption and high switch speed, especially for mobile computing. But the job is still going on and needs more development.
"Lab-based prototypes can be seen for a few years or longer," he says. It is very complicated to build an entire work memory cell, which is likely to take a long time.
The National Science Foundation supported this job through the Material Research and Engineering Center (MRSE) program.